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Data Sheet Graphene Oxide
· Resistivity of Si substrate: 1-10 Ω
Our monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (300nm) by a semi-dry transfer process
Each batch must pass the following tests:
Aerospace industry (electronics
Monolayer Graphene on Cu Choose Your Size:15 cm x 15 cm Data Sheet Graphene OxideMonolayer Graphene on Cu Processed in ISO 7 Cleanroom This product consist on a single layer graphene grown on copper foil substrate. Graphene Film Growth method: CVD synthesis Appearance (color): Transparent Transparency: > 97% Coverage: > 95% Number of graphene layers: 1 Thickness (theoretical): 0. 345 nm AFM Thickness (air @RT): <1nm Electron Mobility on SiO2 Si: 1500 cm2 Vs Sheet Resistance on SiO2 Si: 35040 Ohms sq (1cm x1cm) Grain size: Up to 20